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| MMBT2369 / MMBT2369A MMBT2369 / MMBT2369A NPN Version 2006-06-02 Power dissipation - Verlustleistung 2.9 0.1 0.4 3 1.30.1 1.1 Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren fur die Oberflachenmontage NPN 250 mW SOT-23 (TO-236) 0.01 g Type Code 1 1.9 2 2.5 max Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Dimensions - Mae [mm] 1=B 2=E 3=C Maximum ratings (TA = 25C) Collector-Emitter-volt. - Kollektor-Emitter-Spannung Collector-Emitter-volt. - Kollektor-Emitter-Spannung Collector-Base-voltage - Kollektor-Basis-Spannung Emitter-Base-voltage - Emitter-Basis-Spannung Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur E-B short B open E open C open VCES VCEO VCBO VEBO Ptot IC Tj TS Grenzwerte (TA = 25C) MMBT2369 40 V 15 V 40 V 4.5 V 250 mW 1) 200 mA -55...+150C -55...+150C MMBT2369A 15 V 15 V 40 V Characteristics (Tj = 25C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis ) 2 Kennwerte (Tj = 25C) Typ. - - - - - - - - - - - - Max. 120 - 120 - - - - 0.25 V 0.20 V 0.30 V 0.25 V 0.50 V IC = 10 mA, VCE = 1 V IC = 100 mA, VCE = 2 V IC IC IC IC IC = = = = = 10 mA, 10 mA, 10 mA, 30 mA, 100 mA, VCE = VCE = VCE = VCE = VCE = 1V 0.35 V 0.35 V, Tj = -55C 0.4 V 1V MMBT2369 hFE hFE hFE hFE hFE hFE hFE VCEsat VCEsat VCEsat VCEsat VCEsat 40 20 - 40 20 30 20 - - - - - MMBT2369A Collector-Emitter saturation voltage - Kollektor-Emitter-Sattigungsspg. 2) IC = 10 mA, IC IC IC IC = = = = 10 mA, 10 mA, 30 mA, 100 mA, IB = 1 mA IB = IB = IB = IB = 1 mA 1 mA, Tj = 125C 3 mA 10 mA MMBT2369 MMBT2369A 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% http://www.diotec.com/ (c) Diotec Semiconductor AG 1 MMBT2369 / MMBT2369A Characteristics (Tj = 25C) Min. Base-Emitter saturation voltage - Basis-Emitter-Sattigungsspannung 2) IC IC IC IC = = = = 10 mA, 10 mA, 30 mA, 100 mA, IB IB IB IB = = = = 1 mA 1 mA, Tj = -55C 3 mA 10 mA MMBT2369A VBEsat VBEsat VBEsat VBEsat ICBO ICBO MMBT2369A IC = 10 A 2 Kennwerte (Tj = 25C) Typ. - - - - - - - - - - - - - 5 ns 8 ns 10 ns < 420 K/W 1) MMBT2369 = 1J MMBT2369A = 1JA Max. 0.85 V 1.02 V 1.15 V 1.60 V 0.4 A 30 A 0.4 A - - - - 4 pF - 13 ns 12 ns 18 ns 0.7 V - - - - - - 40 V 15 V 40 V 4.5 V - 5 - - - Collector-Base cutoff current - Kollektor-Basis-Reststrom VCB = 20 V, (E open) VCB = 20 V, Tj = 125C, (E open) Collector-Emitter cutoff current - Kollektor-Emitter-Reststrom VCE = 20 V, (B-E short) Collector-Emitter breakdown voltage Collector-Emitter breakdown voltage ) Collector-Base breakdown voltage Emitter-Base-breakdown voltage VCB = 5 V, IE = ie = 0, f = 1 MHz Small signal current gain - Kleinsignal-Stromverstarkung VCE = 10 V, IC = 10 mA, f = 100 MHz Switching times - Schaltzeiten storage time turn-on time turn-off time IB1 = IB2 = IC = 10 mA VCC = 3 V, IC = 10 mA, IB1 = 3 mA VCC = 3 V, IC = 10 mA IB1 = 3 mA, IB2 = 1.5 mA ts ton toff RthA hfe ICES V(BR)CES V(BR)CEO V(BR)CBO V(BR)EBO CCBO IC = 10 mA IC = 10 A IC = 10 A Collector-Base Capacitance - Kollektor-Basis-Kapazitat Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Marking - Stempelung 2 1 Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG 2 |
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